實(shí)驗(yàn)室流化床CVD：1200℃真空氣氛垂直管式爐

SGM 實(shí)驗(yàn)室流化床CVD是由洛陽西格馬高溫電爐生產(chǎn)的真空氣氛垂直管式爐，為化學(xué)氣相沉積法可控及批量制備碳納米管設(shè)備。

SGM laboratory fluidized bed CVD is a vertical tube furnace with vacuum atmosphere produced by Luoyang sigma high temperature electric furnace. It is a controllable and batch preparation equipment of carbon nanotubes by chemical vapor deposition.

西格馬 三溫區(qū)立式管式爐

實(shí)驗(yàn)室流化床CVD設(shè)備包括有：自動(dòng)加液裝置、超聲波霧化發(fā)生裝置、氣體供應(yīng)裝置、氣體流量控制裝置、流化床反應(yīng)器及加熱裝置、旋風(fēng)分離器、固體收集裝置、凈化處理裝置。氣體供應(yīng)裝置出氣口在經(jīng)過氣體流量控制裝置后與超聲波霧化裝置進(jìn)氣口相連接，自動(dòng)加液裝置出液口與超聲波霧化發(fā)生裝置進(jìn)液口相連接，通過霧化裝置內(nèi)部的液體控制裝置來控制加液。超聲波霧化裝置的出口與三溫區(qū)流化床反應(yīng)器的進(jìn)料口相連接，反應(yīng)器的出料口通過透明管與旋風(fēng)分離器相連接，旋風(fēng)分離器上面的氣體出口與凈化處理裝置相連接，下面的固體捕集出口與固體收集器相連接。經(jīng)過旋風(fēng)分離器后，大量的氣體向上通過凈化裝置后排向大氣，而固體則捕集到固體收集裝置中。碳納米管生長(zhǎng)*難控制的就是氣場(chǎng)和流場(chǎng)溫度差異相互影響，由于變量太多，無法確保生長(zhǎng)的碳納米管形態(tài)一致，從而質(zhì)量質(zhì)量非常低，可解決氣場(chǎng)和流場(chǎng)及溫度變量的相互影響。

The laboratory fluidized bed CVD equipment includes: automatic liquid feeding device, ultrasonic atomization generator, gas supply device, gas flow control device, fluidized bed reactor and heating device, cyclone separator, solid collection device and purification treatment device. After passing through the gas flow control device, the gas outlet of the gas supply device is connected with the air inlet of the ultrasonic atomization device, and the liquid outlet of the automatic liquid feeding device is connected with the liquid inlet of the ultrasonic atomization generating device, and the liquid feeding is controlled by the liquid control device inside the atomization device. The outlet of the ultrasonic atomization device is connected with the feed inlet of the three temperature zone fluidized bed reactor, the outlet of the reactor is connected with the cyclone separator through a transparent tube, the gas outlet above the cyclone separator is connected with the purification treatment device, and the solid capture outlet below is connected with the solid collector. After the cyclone separator, a large amount of gas upward through the purification device back to the atmosphere, and the solid is captured in the solid collection device. The most difficult thing to control the growth of carbon nanotubes is the interaction of temperature difference between gas field and flow field. Because of too many variables, it is impossible to ensure that the morphology of carbon nanotubes is consistent, so the quality of carbon nanotubes is very low.

可通過流量計(jì)和靜態(tài)混氣室把氣體均勻混拌，通過上通氣，氣體通過雙層管(夾層管預(yù)熱氣體，內(nèi)腔體生長(zhǎng)碳納米管)確保通入的氣體進(jìn)入生長(zhǎng)腔體內(nèi)溫度一直，通過多空陶瓷網(wǎng)的結(jié)構(gòu)設(shè)計(jì)，從而解決均勻進(jìn)氣的問題。使的生長(zhǎng)腔體熱場(chǎng)流場(chǎng)穩(wěn)定，確保得到高質(zhì)量重復(fù)性好的碳納米管。(另配一臺(tái)加熱霧化裝置，一個(gè)氫氣報(bào)警器)

The gas can be evenly mixed through a flowmeter and a static air mixing chamber. Through the upper ventilation, the gas passes through the double-layer tube (the sandwich tube preheates the gas, and the carbon nanotubes grow in the inner cavity) to ensure the temperature of the gas entering the growth chamber. Through the structural design of multi space ceramic mesh, the problem of uniform air intake can be solved. The results show that the thermal field flow field of the growth chamber is stable, and the carbon nanotubes with high quality and good repeatability are obtained. (equipped with a heating atomization device and a hydrogen alarm)

實(shí)驗(yàn)室流化床CVD主要技術(shù)參數(shù)：

1、電爐名稱：實(shí)驗(yàn)室流化床CVD

2、爐管材質(zhì)：高純石英管

3、爐管尺寸：OD: 80 mm (外管)，OD 50mm(內(nèi)管)

4、加熱元件：首鋼、康奈爾電阻絲

5、工作溫度：連續(xù)工作溫度：≤1100℃

6、溫控系統(tǒng)：30段可編程控溫，PID參數(shù)自整定，操作界面為7"液晶觸摸屏控制

7、控溫精度：±1℃

8、加熱區(qū)長(zhǎng)度：600mm

9、恒溫區(qū)長(zhǎng)度：400mm

10、供氣系統(tǒng)：內(nèi)部裝有3路高精度質(zhì)量流量計(jì)可準(zhǔn)確的控制氣體流量；設(shè)靜態(tài)混氣室，有助于氣體充分混合，按要求配比。

1）流量計(jì)標(biāo)準(zhǔn)量程：100sccm，200sccm，200sccm，500sccm(非特殊以氮?dú)鈽?biāo)定，量程可選)

2）工作溫度：5~45℃

3）工作壓差：0.1~0.5MPa

4）壓力：3MPa

5）準(zhǔn)確度：±1.5% FS

6）測(cè)量范圍：-0.1~0.15 MPa(0.01 MPa/grid)

7）針閥：316不銹鋼

8）混氣罐：Φ80×120mm

9）截止閥：Φ6mm”316不銹鋼針閥

10）尺寸：600×600×650 mm

SiC包覆層是高溫氣冷堆核燃料元件TRISO包覆顆粒*關(guān)鍵的一層。制備細(xì)晶SiC包覆層對(duì)阻擋裂變產(chǎn)物釋放、提高SiC包覆層承壓能力等具有重要意義。

管式爐常規(guī)爐型選型表