主要特性與技術(shù)指標(biāo)
適用于 高 k/SOI 脈沖 IV 表征的解決方案
精確的 Id-Vd 和 Id-Vg 測量
選通脈寬最小值是 10 ns，上升和下降時間為 2 ns
1 µs 電流測量分辨率
在直流測量和脈沖測量之間輕松切換
支持的分析儀：B1500A、E5270B、E5260A、E5262A、E5263A、4155/56C 和 4155/56B
描述
脈沖 IV 參數(shù)測試逐漸成為進行半導(dǎo)體制程開發(fā)和半導(dǎo)體器件測試的一項常見要求。最近幾年，在更制程不斷發(fā)展的推動下，用戶對精確脈沖 IV 測量的需求不斷增加。為了滿足這些需求，是德科技推出了多種脈沖 IV 參數(shù)測試解決方案。它們提供更廣泛的脈寬、電壓/電流輸出和性能。
Keysight B1542A 10 ns 脈沖 IV 參數(shù)測試解決方案的脈寬范圍是 10 ns 至 1 ms，非常適合對采用高 k 柵介質(zhì)材料構(gòu)成的 MOSFET 或在 SOI 晶圓上裝配的 MOSFET 進行表征。該脈沖 IV 解決方案允許您使用脈寬為 10 ns、上升和下降時間為 2 ns 的脈沖信號（速度非?？欤倚盘柕倪^沖和下沖非常低。
Main features and technical indicators
Optimal solution for high k/SOI pulse IV characterization
Accurate measurements of id-vd and id-vg
The minimum gate pulse width is 10 ns, and the rise and fall time is 2 ns
1 s current measurement resolution
Easy switching between dc measurement and pulse measurement
Supported analyzers: B1500A, E5270B, E5260A, E5262A, E5263A, 4155/56c and 4155/56b
describe
Pulse IV parameter testing is becoming a common requirement for semiconductor process development and semiconductor device testing. In recent years, the need for accurate pulse IV measurements has increased, driven by the development of more advanced processes. In order to meet these requirements, SDT has launched a variety of pulse IV parameter testing solutions. They provide a wider range of pulse widths, voltage/current outputs, and performance.
Keysight B1542A 10 ns pulse IV parameter test solution has a pulse width range of 10 ns to 1 ms, which is very suitable for the characterization of MOSFET made of high-k gate dielectric material or MOSFET assembled on SOI wafer. The pulse IV solution allows you to use pulses with a pulse width of 10 ns, a rise and fall time of 2 ns (very fast), and very low overshoot and downshoot of the signal.
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